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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 DESCRIPTION With TO-220C package Complement to type BD534/536/538 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO CHA IN Emitter-base voltage Collector current Emitter current Base current Collector-base voltage GE S N BD535 BD537 BD533 BD535 BD537 BD533 Open emitter EMIC CONDITIONS OND TOR UC VALUE 45 60 80 45 UNIT V Collector-emitter voltage Open base 60 80 V VEBO IC IE IB PC Tj Tstg Open collector 5 8 8 1 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD533 ICBO Collector cut-off current BD535 BD537 BD533 ICES Collector cut-off current BD535 BD537 IEBO Emitter cut-off current CONDITIONS IC=2 A;IB=0.2 A IC=6 A;IB=0.6 A IC=2A ; VCE=2V VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 VEB=5V; IC=0 20 IC=10mA ; VCE=5V 0.1 mA 0.1 mA 0.8 1.5 MIN TYP. MAX 0.8 UNIT V V V SYMBOL VCEsat-1 VCEsat-2 VBE hFE-1 DC current gain BD533/535 BD537 hFE-2 DC current gain DC current gain (All device) hFE-3 hFE-4 DC current gain (All device) INCH GE S AN Group: J Group: K Group: J Group: K IC=0.5A ; VCE=2V IC=2A ; VCE=2V EMIC OND 15 40 30 40 15 TOR UC 75 100 1 mA IC=3A ; VCE=2V 20 IC=0.5A ; VCE=1V 3 12 MHz fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD533/535/537 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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